PART |
Description |
Maker |
MIE-114A1 114A1 |
Infrared Emitting Diodes (IRED) GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
MIE-524H4 524H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
GL550 GL551 |
High Speed Infrared Emitting Diode
|
Sharp Electrionic Compo... Sharp Corporation
|
VSMY1850 |
High Speed Infrared Emitting Diodes
|
Vishay Siliconix
|
VSMY2850G |
High Speed Infrared Emitting Diodes
|
Vishay Siliconix
|
VSMF2893GX01 |
High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH
|
Vishay Siliconix
|
TSHG5210 TSHG521009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
VSMY2850RG11 |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
VSMF471009 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSHG8400 TSHG840009 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
http:// Vishay Siliconix
|